| 摘要 |
PURPOSE:To prevent electrodes from becomining narrow due to overetching, etc., by forming an SiO2 film at a part on a piezoelectric substrate other than parts where an input electrode and output electrode are formed. CONSTITUTION:On piezoelectric chip 11, SiO2 film 12 is formed to a thickness of 1,000-10,000Angstrom . Next, it is etched to remove the SiO2 film on the chip where an input electrode and output electrode are to be formed while leaving SiO2 film 13 that corresponds to the other part. On this chip, aluminum 14 is vapor-deposited and then etched to remove the part other than input electrode 15 and output electrode 16, forming input and output electrodes. |
