发明名称 Method for producing silicon nitride molded bodies by means of pseudoisostatic hot pressing
摘要 Method and apparatus for producing silicon nitride molded bodies by means of a pseudoisostatic hot pressing process. Silicon nitride is initially ground in a grinding vessel with grinding elements wherein the vessel is lined with the same material from which the grinding elements are made, e.g., hot pressed silicon nitride. Grinding is continued until a specific surface area greater than 15 m2 is obtained. The grinding takes place in the presence of a grinding liquid to prevent oxidation of the freshly ground silicon nitride. The silicon nitride suspension is then treated in a pressure vessel to remove the grinding liquid therefrom and form a blank. The blank is thereafter embedded within a pressure transfer medium, e.g., boron nitride, and inserted into the die of a hot pressing furnace to obtain the desired hot pressed silicon nitride. The pressure vessel used in this method comprises a chamber for the silicon nitride suspension, an outlet means connected to the bottom of the chamber to permit the vacuum removal of the grinding fluid from said suspension; and an inlet means connected to the chamber for admitting an inert gas, e.g., nitrogen, into the chamber.
申请公布号 US4264546(A) 申请公布日期 1981.04.28
申请号 US19790021975 申请日期 1979.03.19
申请人 KERNFORSCHUNGSZENTRUM KARISRUHE GMBH 发明人 BECKER, RUDOLF
分类号 B28B3/02;C04B35/593;C04B35/645;(IPC1-7):C04B35/58;F27B9/04;F27B9/10 主分类号 B28B3/02
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