发明名称 |
Method of preparing resist pattern |
摘要 |
A method of preparing a fine and highly precise resist pattern comprising a step of forming a positive resist layer consisting of poly-(methacrylic anhydride) on a substrate, a step of irradiating the resist layer thus formed with a predetermined pattern of ionizing radiation and a step of developing the irradiated resist pattern with a developer comprising a solvent mixture composed of a polar organic solvent (A) capable of dissolving poly-(methyacrylic anhydride) and a non-solvent (B) incapable of dissolving poly-(methacrylic anhydride).
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申请公布号 |
US4264715(A) |
申请公布日期 |
1981.04.28 |
申请号 |
US19790094048 |
申请日期 |
1979.11.14 |
申请人 |
VLSI TECHNOLOGY RESEARCH ASSOCIATION |
发明人 |
MIURA, AKIRA;HIDEYAMA, SHOZO;HIGASHIKAWA, IWAO |
分类号 |
G03F1/00;G03F1/08;G03F7/039;G03F7/32;H01L21/027;(IPC1-7):G03C5/00 |
主分类号 |
G03F1/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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