| 摘要 |
PURPOSE:To reduce the conductance of a field effect transistor by varying a channel width from a source side to a drain side and suppressing the increase in the gate threshold value of the transistor. CONSTITUTION:Channel, source and drain regions of a field effect transistor are defined by the pattern 10 of a gate insulated film, are separated by the gate electrode pattern 102, and a source 103 and a drain 104 are thus formed. The channel is now formed of a series connection of two sections having sizes of W1Xl and W2Xl2. The drain current can be reduce to approx. 65% in case of the channel having 2l1=L and W1=2W2 as compared with the case of the channel having constant W1 according to this configuration. Even if the width W2 is sufficiently decreased, the short channel effect cancels the narrow channel effect in the channel region of the drain side, so that the threshold voltage can be set at the generally same as the source side. Even if the channel width is continuously reduced from the source side, similar effect can be obtained. |
