摘要 |
PURPOSE:To lessen the reducing of the film and pin hole defects by applying positive type resist on a substrate and curing it, then, removing the component which is readily soluble relatively by using solvent, and performing exposing and developing treatments. CONSTITUTION:Resist which becomes readily soluble to solvent by the irradiation of radiations such as an electron beam and the like, i.e., positive resist, is applied on a substrate, and heated and cured as required. Thereafter, the component which is readily soluble relatively is removed by using developing solvent or solvent having approximately the same solubility as said developing solvent. Then, heating and curing are performed as required. Thereafter, exposing and developing treatments are performed. By using this method in preparing a resist pattern by the positive type resist, the reducing of the film can be lessened, the shape of the resist pattern can be improved, and the pin hole defects can be greatly reduced. |