| 摘要 |
PURPOSE:To improve the externally differential efficiency of a semiconductor light emitting device by doping P in an window layer when laminating and growing a light emitting layer and the window layer of hybrid crystal semiconductor made of GaAlAs on a substrate, thereby suppressing light absorption in the window layer. CONSTITUTION:An N type Ga1-xAlAs light emitting layer 2 and a P type Ga1-yAlyAs window layer 3 are so laminated and epitaxially grown on an N type GaAs substrate 1 while retaining x<y, an N side electrode 4 is formed on the back surface of the substrate 1, and a P side electrode 5 is formed on the layer 3. If the light emitting diode is thus constructed and is energized, the light emitting from the layer 2 under the condition of hybird crystal ratio of x<y is not absorbed in the layer 3 but can be efficiently irradiated externally, but is actually absorbed mostly, and low intensity can be obtained in emitting the light. Accordingly, small amount of N type impurity is added with P to the P type window layer 3, thereby eliminating the formation of the light absorption region having low amount of aluminum and thereby improving the efficiency of the device. |
