| 摘要 |
PURPOSE:To form semiconductor islands which are electrically isolated each other by selectively oxidizing the semiconductor layers on an insulated or semi-insulated layer. CONSTITUTION:An insulated or semi-insulated layer 4 comprising low grade oxide or nitride is formed on a semiconductor substrate 1, and a semiconductor layer 5 is provided on said layer 4. A mask 6 that can be selectively oxidized is formed on a layer 5. Then, oxidation is performed with said mask 6 as a mask. Said oxidation not only oxidizes the layer 5, but also oxidizes the lower portion of the layer 4 beneath said layer 5. As a result, an oxide insulator 10 is provided in the vicinity of the sides of semiconductor layers 7 and 7' which are electrically isolated each other by the insulator 10. By utilizing said semiconductor layers, C-MOS wherein P-channel MIS.FET or IC is formed in one region and N-channel MIS.FET or IC is formed in the other region. |
