| 摘要 |
PURPOSE:To enable an intersection of an aluminum wire and a wire of a source electrode for a static induction transistor SIT by forming the gate of the SIT only with an alloying treatment without a thermal diffusion step. CONSTITUTION:An n<-> type channel 13 is epitaxially grown on an n<+> type drain 12, holes are opened at an SiO2 film 16, a source electrode 17 of polysilicon containing P in high density is provided in the hole, and is treated at high temperature, and an n<+> type source 15 is formed. The electrode 17 is covered with an oxide film 18, an aluminum electrode 19 is formed thereon, is heat treated, and aluminum is diffused in the substrate, and a p type gate 14 is formed thereon. According to this configuration a special diffusing step is unnecessary to form the gate 14 and the source 15. Since the film 18 is formed further on the source electrode 17, a gate electrode 19 can be superimposed on the source electrode 17, and can also be readily positioned. |
