| 摘要 |
PURPOSE:To permit a lithography apparatus to be more compact by placing a mask and a mirror between an object to be exposed and a ray source, and swinging the mirror to perform lithography. CONSTITUTION:The X-ray radiated from an electron orbit 1 of a synchrotron are emitted from a ray source having a directivity of an angle theta, and applied through a mask 2 to a wafer 3. In this case, an X-ray reflecting mirror 4 is placed near the ray source, and swinged vertically or in the direction of theta1. This permits the X-rays to perform a scan or step-scan within the range of the stripe-shaped mask. Allowing the mirror 4 to totally reflect by making the incidence angle small permits an Au evaporated mirror to obtain a reflection power close to 100% for soft X-rays of the order of 100Angstrom or more. This permits the distance between the ray source and the object to be exposed to be less than half. Consequently, the apparatus can be more compact. |
