| 摘要 |
PURPOSE:To obtain a high-efficiency and high-output laser, when preparing a semiconductor laser by placing an activated layer between two clad layers, by providing a guide layer between the activated layer and one of the clad layer, and also by thinning thickness of the guide layer on one side of thus produced Fabry-Perot type resonator. CONSTITUTION:By achieving liquid phase epitaxial growth on an N type InP substrate 3 of an N type InP clad layer 4 whose energy prohibition belt width is wider than an N type activated layer 1 and a P type guide layer 2 which are to be provided later, an N type In0.76, Ga0.24, As0.55, P0.45 activated layer 1 and a P type In0.83, Ga0.17, As0.39, P0.61 guide layer 2 whose prohibition belt width is wider than that of the layer 1 are laminated thereon and allowed to achieve the growth. And then, of thus produced fabribellows resonating surfaces R and R', while R side is remained to a thickness of approximately 30mum, photoetching is done toward R' side to reduce thickness of the layer 2 to approximately 0.3mum. And then, the surface is covered with a P type InP clad layer 5 having a prohibition belt width equal to that of the layer 2, and electrodes 6 and 7 are respectively attached to the front side and the reverse side. |
