| 摘要 |
PURPOSE:To improve a semiconductor device in electrostatic burnout characteristics and to uniform the interelement characteristics by using a polycrystalline Si film and a mono-to-polycrystal transition region as a surface stabilizing film. CONSTITUTION:On a monocrystalline Si substrate 1, a polycrystalline Si film 4 is provided as a surface stabilizing film, and moreover a mono-to-polycrystal transition region 5 is provided between the substrate 1 and the film 4. The structure having the film 4 and the region 5 as a surface stabilizing film permits the electrostatic burnout characteristics to be largely improved and at the same time, the interelement characteristics to be uniformed. In addition, the preparation of the element is provided with excellent controllability, and thus the reproducibility of the element characteristics can be greatly improved. |
