| 摘要 |
PURPOSE:To permit the photo resist having passed around to the lower surface of a semiconductor substrate to be also removed, by injecting a developing solution to not only the upper surface of a semiconductor surface to which photo resist has been applied but also the lower surface. CONSTITUTION:Above an Si wafer 2 on which photo resist 1 is applied, a developing solution injection nozzle 4 is placed. In developing, a wafer chuck 3 rotates and the nozzle 4 injects a developing solution 5. At this time, a developing solution injection nozzle 6 is placed also on the lower surface side of the wafer 2 to inject the developing solution 5 to the lower surface of the wafer 2. This permits the photo resist having passed around to the lower surface of the wafer 2 to be removed. |
