| 摘要 |
PURPOSE:To obtain a high reliability device by previously performing positive oxidation for the surfaces of splitted grooves when a semiconductor plate is split into chips with small area wherein a short-circuit accident is prevented. CONSTITUTION:A semiconductor plate 21 having Ag bumps 22 corresponding to function regions at one main surface and having an electrode layer 23 at the other main surface is provided. SiO2 films 24 are opened between each function region and grooves 25 are formed to cover the surfaces of the grooves with positive oxide films 26. Next, the semiconductor plate 21 is split by the grooves 25 to form semiconductor chips 27. Each chip 27 is inserted between a couple of electrodes 28, 29 for holding. And the external circumference is surrounded by a glass tube 30 for hermetic sealing. In this composition, no short-circuit accident will occur and reliability will be improved even if conductive foreign substances are mixed with a semiconductor device at the time of hermetic sealing because the surfaces of the grooves have positive oxide films. |
