| 摘要 |
PURPOSE:To improve integration by providing an insulating layer arranged on a heating body layer which has one terminal connected to either of word and digit memory lines and the other grounded, and a metal electrode layer connected to the other memory line arranged on the layer. CONSTITUTION:To write information in a PROM cell, a 3V voltage is applied between digit line 7 and earth 8 to flow a 15mA current, for example, to heating-body layer 2 made of polysilicon, thereby heating the temperature up to 600 deg.C. Between heating-body layer 2 and connecting electrode 3 made of a vapor-deposited film of aluminum, a 3V voltage is applied by way of digit line 7 and word line 9. Then, aluminum forming connecting electrode 3 intrudes into SiO2 insulating layer 5 of heating-body layer 2 under connecting electrode 3 and then reaches heating-body layer 2 to form a short circuit between connecting electrode 3 and heating-body layer 2, thereby connecting digit line 7 and word line 9 together. |
