发明名称 PHOTOETCHING
摘要 PURPOSE:To completely remove nonsensitized photoresist and to perform an accurate pattern formation by a method wherein an exposed substrate having a photoresist film is developed in developing solution which is oscillated by supersonic waves. CONSTITUTION:A copper foil 2 and a photoresist 16 are coated on the surface of an insulated substrate 1, a wiring pattern is exposed, then this substrate 1 is immersed into developing solution 19 and subsequently developing solution 22 is sprayed on it using a sprayer 21, for example. Next, the substrate is developed by soaking into the developing solution in a bath in which a gas-proof type supersonic wave exciter 23 is provided. The gas-proof type supersonic wave exciter 23 has a supersonic wave vibrator 26, an oscillator 27, a controller 28, a temperature sensor 29, a heater 30 and the like. Hence, no residue of photoresist film remains at all and a perfect developing can be performed in a short time.
申请公布号 JPS5643722(A) 申请公布日期 1981.04.22
申请号 JP19790119674 申请日期 1979.09.17
申请人 MATSUSHITA ELECTRIC IND CO LTD 发明人 KONISHIGAWA KAORU;NAKASHIMA NORIO
分类号 H01L21/30;G03F7/30;G03F7/42;H01L21/027;(IPC1-7):01L21/30 主分类号 H01L21/30
代理机构 代理人
主权项
地址