| 摘要 |
<p>The object of the invention is to passivate an electronic component of the semiconductor material type, in the case of Ga As, by a semiinsulating layer (4) exhibiting substantially the same coefficient of thermal expansion as Ga As. To this end, the Ga As monocrystalline substrate is subjected to two successive epitaxies, for example in the vapour phase in the same apparatus, in the course of which epitaxies the compounds which are customary in the epitaxial formation of Ga As are caused to act successively to constitute an active layer (3) with an appropriate dopant, and then gaseous compounds capable, with an appropriate dopant, of forming GaxAl1-xAs with x within the range between 0 and 1, or alternatively Ga0.47 In0.53P which are semiinsulators of the same crystalline lattice size as Ga As to constitute the layer (4). Application to diodes and transistors. <IMAGE></p> |
