| 摘要 |
<p>PURPOSE:To cut a fusible body at a low temperature and with little currents by a method wherein two heating elements and the low melting point metallic thin-film fusible body between the elements are formed on a semiconductor substrate, and the fusible body is fused by the generation of heat of the heating elements. CONSTITUTION:The heating elements 3, 3' consisting of thin-films such as polycrystalline silicon thin-films are formed on the semiconductor substrate 1 through a silicon oxide film 2, holding a minute void. The fusible body 4 of low melting point metallic thin-film being composed of the thin-film such as an Al thin-film is made up between the heating elements 3, 3'. The heating elements are under conductive condition as they are, and when needing change-over currents greater than normal operation are flowed between the heating elements 3, 3', the soluble body 4 is fused and the elements are brought to opened conditions. This semiconductor device is used for an MOSRAM and a PROM which can be changed over with elements which faulty elements in the semiconductor device are excessively formed. Thus, the soluble body can be cut with little currents because the heating elements are built in.</p> |
