| 摘要 |
PURPOSE:To separate the elements completely by a method wherein a shallow insulating layer for separating the elements is formed on a silicon substrate having high impurity concentration, and reverse conductive impurities are injected to an element forming region by means of ion injection and the concentration of carriers is lowered. CONSTITUTION:The element forming region 2 of the P<+> Si substrate 11 is covered with a resist mask 3, a shallow element separating groove 4 is made up around the element forming region 2, an SiO2 layer 5 is deposited by means of a plasma gaseous- phase growth method, the SiO2 layer 5 is removed with the resist film 2, and a shallow buried SiO2 layer 5' is built up around the element forming region 2. A gate SiO2 layer 6 consisting of a thermal oxide film is formed in the element forming region 2, and phosphor 12 is injected on an upper surface of the P<+> Si substrate 11 and a low concentration carrier layer 13 is made up. Gate electrodes 9 are built up, and N type source layers 7 and drain layers 8 are formed. |
