| 摘要 |
PURPOSE:To maintain uniformity of a plasma etching by a method wherein a concaved section, having an upper end opening which is bigger than an etched material so as to be isolated from the etched material, is formed on an etched material placing electrode of an etching device. CONSTITUTION:On an etched material placing electrode 9, where an etched material 10 (a silicon substrate, etc.) is to be placed, a concaved section having a depth which is deeper than that of the etched material 10 with tapered off 11 circumference is provided and the height of contacting section 12 with the material to be etched is made lower than the height of the surface of the material to be etched. Hence, concentration of electrostatic at a specific point is eliminated and the stability of an etching form or uniformity of a plasma etching can be maintained. |
