| 摘要 |
PURPOSE:To obtain a stable protection film having a sufficient thickness by a method wherein a mesh type silicon semiconductor is mounted on a cavity of the molybdenum round plate having the concave cavity and the glass passivation is performed on the bevel phase of a silicon semiconductor. CONSTITUTION:A silicon wafer 1 having an Al electrode 5 and a bevel phase 3 around thereof is contained in the larger diameter cavity of concave molybdenum than the diameter of the silicon wafer. The back side of the wafer 1 and molybdenum are heated to make the alloy, then glass particles are attached to the concave to obtain the glass passivation. According to this, since the glass particles does not flow out and the sufficiently thick glass passivation film can be obtained, it enables the manufacture of semiconductor element for the high pressure proof large power. |
