| 摘要 |
<p>Reduction of base width, base emitter dimensions and spacings is achieved using a process in which windows opened in an oxide film on silicon are refilled with a doped (or undoped) deposited oxide. The addition of an impurity, such as germanium, to the oxide greatly increases its etching rate compared with pure SiO2. Thus after a diffusion process the deposited oxides can be removed by etching, exposing the original windows. Using this process a high frequency transistor was fabricated with base width 100 A angstroms, base and emitter contacts 1.5 X 50 mu and base emitter spacing 1.5 mu.</p> |
