| 摘要 |
PURPOSE:To decrease false operation due to alpha rays by a method wherein a means is mounted by which electrons or holes generated in a silicon substrate due to alpha rays cannot reach to a capacitor region. CONSTITUTION:Memorized informations are written into the capacitor region 2 in such a manner that voltage corresponding to the contents of the writing-in is given to an n<+> type silicon region 8, a transistor region 3 is conducted by driving the second polysilicon layer 7 forming the gate of the transistor region 3 and the informations are written into the capacitor region 2, and the gate of the transistor 3 is grounded and broken. Electrons or holes generated due to alpha rays are interrupted by a silicon oxide film 10. |
