| 摘要 |
PURPOSE:To prevent the lowering of dielectric strength among wirings by a method wherein a lower layer wiring, whose surface has an insulating film, is formed on a substrate, a silicon hydroxide is applied on the whole surface and the surface is heated and a silicon oxide layer is made up, and an upper layer wiring is built up through an insulating film, in the formation of a multilayer wiring. CONSTITUTION:A metallic layer 1' for lower layer wiring in Al is formed on an Si substrate 2 on which a function element 6 is made up, an SiO2 film 7 is built up on the surface, patterning is conducted, and the lower layer Al wiring 1 is formed. A liquid 3 obtained by dissolving a silicon hydroxide such as Si(OH)4 or its low molecular polymer in ethanol, etc. is applied, heated and dehydrated and condensed, and an SiO2 layer 3 covering the lower layer wiring is made up. The upper layer Al wiring 5 is formed on the layer 3 through an interphase insulating layer 4 such as a phosphor silicate glass layer 4. Thus, the generation of cracks in the interphase insulating layer and the growth of hillocks formed on the lower layer wiring are prevented, and the lowering of dielectric strength can be prevented. |
