| 摘要 |
PURPOSE:To prevent contamination from electrode metal and to maintain uniformity of etching by a method wherein a dielectric material layer where a substance to be etched is placed is formed on one of electrode of a plasma-etching device and air vents are provided on interfaces of electrodes and a dielectric layer. CONSTITUTION:A laying place of a substance to be etched 11 (underneath of which an organic material 12 such as polyester film or the like is provided) is formed by providing a high molecular material layer 9 such as tetrafluoro-ethylene resin or the like on a metal electrode 8, and an air vent 10 which is leading to a vacuum container of the device is provided. As a result, contaimination coming from the metal of the material to be etched 11 is eliminated, the gas emitted by organic substance is discharged, the material on which an etching is performed is tightly fixed and a stabilized uniformity of etching can be maintained. |
