SEMICONDUCTOR PRESSURE SENSOR

摘要

PURPOSE:To improve output variation efficiency and linearity by dividing resistors set on the surrounding part in the direction of a specific crystal axis. CONSTITUTION:A diaphragm 2 is formed on a silicon semiconductor wafer having a wafer surface as a crystal surface (110) and resistances R2 and R3 are provided in the center thereof. Resistors R2 and R4 are formed on the surrounding part in such a manner that they are divided into five parts along respective directions of crystal axis <110>, <111> and <211> which pass in the center of the diaphragm lengthwise. Division of the resistors set on the surrounding part can shorten the radial length 1 of each resistor so that they are arranged at such a position that a larger stress is received due to a pressure deformation of the diaphragm. As a result, resistance variations DELTAR in the resistors on the surrounding part comes close to that DELTAR of the resistors in the center of the diaphragm.