发明名称 BASE MATERIAL FOR HEAT SINK OF POWER TRANSISTOR
摘要 <p>PURPOSE:To obtain the heat sink which can be manufactured in excellent yield by means of a simple method by a method wherein both sides of a plate material, etc. in copper or a copper alloy are electrostatically coated with powdered paints, and baked and dried, and films are formed. CONSTITUTION:Both sides of the base material 3b consisting of a strip or a plate member in copper or a copper alloy are electrostatically coated by using the powered paints (for example, such as ones being composed of a composition of 24-25% titanium white, 0-3% carbon, 1-6% hardening agent and 50-70% epoxy resin in weight ratios) of an epoxy group, etc., and baked and dried, and films F are formed. Thus, a chip etc. by means of press punching from the plate member can be used, and the heat sink can be manufactured in excellent yield by means of a simple method.</p>
申请公布号 JPS5643745(A) 申请公布日期 1981.04.22
申请号 JP19790118920 申请日期 1979.09.17
申请人 TAMAGAWA KIKAI KINZOKU KK 发明人 SUZUKI HIROSHI
分类号 H01L23/373 主分类号 H01L23/373
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