| 摘要 |
A voltage reference circuit that can use the parasitic bipolar transistors formed by the drain regions, p-well and monolithic substrate of CMOS integrated circuits. First and second common-collector amplifier transistors are arranged to maintain their base-emitter junction current densities in a prescribed ratio. The difference in current density creates a difference in base-emitter potential used to generate a current having a positive temperature coefficient. This current conducted in a resistor connected to the emitter of the first transistor generates a potential having a positive temperature coefficient. The potential across the first resistor in the emitter circuit of the first transistor is summed with the base-emitter potential of the first transistor producing a reference voltage substantially independent of temperature.
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