发明名称 |
Fabrication of transistors having specifically paired dopants |
摘要 |
A semiconductor device comprising an N type collector layer formed in an N type semiconductor wafer, a P type base layer which is in contact with the N type collector layer at a PN junction that extends to the surface and which contains an N type impurity material of which the energy of combination with vacancies is great and boron is a P type impurity material, and an N type emitter layer which is so formed as to be surrounded by this P type base layer and forms a transistor together with the N type collector layer and the P type base layer and which contains the N type impurity materials phosphorus and arsenic. Arsenic or antimony or the like, which are N type impurity materials of which the energy of combination with vacancies is great are diffused in the P type base layer.
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申请公布号 |
US4263067(A) |
申请公布日期 |
1981.04.21 |
申请号 |
US19800123276 |
申请日期 |
1980.02.21 |
申请人 |
TOKYO SHIBAURA ELECTRIC CO., LTD. |
发明人 |
TAKAHASHI, KOUICHI;ISHIDA, HIDEKUNI;YONEZAWA, TOSHIO |
分类号 |
H01L29/73;H01L21/22;H01L21/331;H01L29/08;H01L29/10;H01L29/167;H01L29/732;(IPC1-7):H01L21/22;H01L29/36 |
主分类号 |
H01L29/73 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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