| 发明名称 |
Method of liquid phase epitaxial growth |
| 摘要 |
An improved method of liquid phase epitaxial growth of III-V compound on an InP substrate by growing the epitaxial layer in an atmosphere of H2 with 10-5 to 10-4 mole fraction PH3.
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| 申请公布号 |
US4263064(A) |
申请公布日期 |
1981.04.21 |
| 申请号 |
US19800122222 |
申请日期 |
1980.02.19 |
| 申请人 |
THE UNITED STATES OF AMERICA AS REPRESENTED BY THE SECRETARY OF THE NAVY |
发明人 |
CLAWSON, ARTHUR R.;LUM, WING Y.;MCWILLIAMS, GERALD E. |
| 分类号 |
C30B19/04;H01L21/208;(IPC1-7):01L21/208 |
主分类号 |
C30B19/04 |
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