| 摘要 |
PURPOSE:To improve the insulating withstand voltage of the semiconductor device between layers by superimposing polysilicon on a high melting point metal, oxidizing the surface and then superimposing the metallic layer thereon. CONSTITUTION:An Mo wire is coated with CVD SiO2 heretofore on a polyphase wires, aluminum wires are superimposed, but the CVD SiO accommodates wrong quality of film as compared with the SiO2 obtained by oxidizing an Si layer, and pin-holes tend to readily occur thereat, and there is high probability for shortcircuits therethrough. Further, it is also noted that high melting point metal such as Mo, etc. exhibits considerably highly active with acid, high temperature acidic atmosphere used in an IC circuit technology. Polysilicon layer is superimposed on Mo, W, Pt or the like, and is thermally oxidized. Thus, an SiO2 film is formed thereon, and a CVD SiO2 film is laminated thereon. An aluminum wire is coated thereon. The SiO2 film on the polysilicon surface has high quality without pin-holes. Accordingly, no interlayer shortcircuit occurs, and the insulating withstand voltage can be improved. |
