| 摘要 |
PURPOSE:To obtain preferable characteristics in the semiconductor displacement transducer by forming a solder layer of distortion creating side of Au-Si eutectic solder and an intermediate layer of a laminate of Cr, Cu, Au as seen from the insulating layer when fixing a distortion creating alloy and a semiconductor distortion detector to the insulating layer and intermediate metallic layer and further through an alloy solder layer. CONSTITUTION:When fixing a semiconductor detector 2 on a distortion creating alloy 1, an alloy solder layer 6 made of Au-Si eutectic solder is converted on the alloy 1, and an intermediate metallic layer 5 laminated with Cr, Cu, Au is formed thereon while bringing Au into contact with the layer 6. Then, an insulating film 4 such as SiO2 is coated at the Cr side of the uppermost layer, the detector 2 is fixed onto the film 4, a reaction unit 3 is formed thereat, and lead wires 7 are led from both ends thereof. Thus, the drift characteristics at high temperature at zero point can be improved, and the nonlinearity error of the distortion vs. output characteristics can be reduced extremely. |
