| 摘要 |
PURPOSE:To diffuse the zinc in high density distribution at a surface and low density at an inside of a substrate by a method wherein ZnAs2 or ZnP2 and III-V group compound semiconductor wafers are vacuum sealed in the same container and wafers are preserve at a high temperature. CONSTITUTION:To diffuse the Zn on the III-V group compound semiconductor at low density, there are a method using GaZn alloy, a method that an SiO2 mask is coated on the GaAs substrate, and Zn is diffused through the mask or others, but there are problems for the weighing of the diffusion source or a complexness of the process, further the surface density will be reduced when the inside densisty of wafer is lowered, it is very difficult to form an excellent ohmic connection. For this reason the ZnAs2 2 as the diffusion source is vacuum sealed in a quartz pipe 1 with the GaAs substrate 3, and make the temperature of the diffusion source 2 and the substrate 3 as T2, T1, when T1 is preserved at 700-900 deg.C, T2 at 600-700 deg.C, the Zn density can be diffused in the high distribution at the surface of substrate, in the low distribution at the inside. Such a method is simple and very advantageous for the manufacturing of LED or others. |
