发明名称 MANUFACTURE OF SEMICONDUCTOR BASE
摘要 PURPOSE:To manufacture an excellent base in mass production by opening a hole at the center of a laminate plate having a metal of good weldability and a metal of good electric conductivity, disposing the plate on a lower die having a recess coaxial with the hole of the plate, engaging a cylindrical die therewith, filling molten metal of high thermal and electric conductivities, and pressurizing it with an upper die having a recess. CONSTITUTION:The through hole 44 is opened at the center of the laminate plate 41 of Ni 42 and Cu 43. The cylindrical die 51 is engaged with the lower die 53 having a recess 52 of predetermined depth at the center, and the Ni 42 of the collar 41 is brought into contact with the die 53. A suitable amount of Cu molten metal 54 is filled on the upper surface of the upper die, is engaged with the die 53, an upper die 56 having a recess 55 of predetermined depth and coaxial with and equal diameter to the recess 52 at the center is placed thereon, is pressurized under the pressure of higher than 500kg/cm<2> for longer than 60sec, and an element base 65, mounting legs 66 and the collar 41 are integrated. Or the collar is further formed to be thicker. Thus, there can be manufactured a base excellent in mechanical and electrical properties in mass production by a simple method.
申请公布号 JPS5642361(A) 申请公布日期 1981.04.20
申请号 JP19790116673 申请日期 1979.09.13
申请人 TOKYO SHIBAURA ELECTRIC CO 发明人 ISHIZAKA MASAHIKO
分类号 H01L23/12;H01L21/48 主分类号 H01L23/12
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