| 摘要 |
PURPOSE:To obtain a microminiature pattern in the semiconductor device by introducing large quantity of B atoms into an SiO2 and then etching it. CONSTITUTION:A resist mask 4 is covered on the SiO2 film 2 on an Si substrate 1, and B, BF2, BCl2 or the like 5 are injected therto in a high density. When the mask 4 is removed and the film is plasma etched or etched with a solution containing an HF, the film 2 containing no B is selectively removed, but the layer 6 containing large amount of B is not etched at all. Accordingly, no side etching occurs, and the microminiature pattern can consequently be obtained. |
