| 摘要 |
PURPOSE:To prevent partial disappearance of crystal composition and to enable the heat treatment in the open air by a method wherein a solid is coated closely on the surface of the compound semiconductor crystal to perform the heat treatment. CONSTITUTION:An N type In0.53Ga0.47As layer 12 is piled on an InP substrate 11 added with Zn, and make InP crystal 21 adhere closely on both surfaces. When the heat treatment is performed in a prescribed manner, the vaporization of high vapor pressure composition such as P, As or others from the surface is refrained by a fine space of the InP crystal 21, and the composition change on the surface is not perceived after the heat treatment, a plane mirror surface is maintained, Zn is diffused from the ZnP substrate 11 to the In0.53Ga0.47As layer 12 to from a P-N junction 13, and the diode with an excellent characteristic is obtained. In this constitution, a CVD protective film or others is not required and the heat treatment can be readily performed in the air without using the gas having the contamination issues. |
