| 摘要 |
PURPOSE:To improve the efficiency of utilization of a memory unit by increasing the potential difference between pieces of cell information H and L by using a capacitor with no voltage dependency for cell capacity and by driving it via a storage word line. CONSTITUTION:As signal levels when word line W is selected, a high potential and intermediate potential are used. The high potential level is so set that while selection gate GT is completely turned on in a read of binary information stored in capacitor Cso8, the potential of bit line B will substantially be equalized to that of node S. Then, the intermediate potential level is set to an adequate value to turn off GT when the potential of line B after sense amplifiers 3 and 30 are activated is at the high level and to turn on it when at the low level. The potential of storage word line Z varies from the low potential to the high potential when line W is at the intermediate potential level and then varies from the high potential to the low potential after line W is unselected. |
