| 摘要 |
PURPOSE:To remove a crystal fault by performing a heat treatment for an Si substrate in inert gas at 600-800 deg.C for over 50hr and successively at 1,100- 1,200 deg.C for over 50hr. CONSTITUTION:With an Si substrate 1 treated in Ar at 600-800 deg.C for over 50hr, nuclei will be formed to cause grid defective nuclei 6 through all the area of the substrate 1. And some of the defective nuclei 6 mainly form a stacking fault by a treatment in Ar at high temperatures of 1,100-1,200 deg.C for over 50hr. Furthermore, the partial defective nuclei 6 come out from both surface and rear sides of the substrate 1 by convering the structure into complete transition. The nuclei 6 not formed a grid fault diffuse outwardly from both surface and rear sides of the substrate 1. Therefore, very high quality nondefective layers 7 will be obtained on both surface and rear sides of the substrate 1. |
