发明名称 Charge transfer device transverse filter - has multiple electrode next to input stage, whose parts are allocated to filter outputs and coupled to them by charge transfer channels
摘要 <p>The filter contains a charge transfer device (CTD), formed on a doped semiconductor substrate. The device has an input stage and several outputs coupled to a filter output. Partial signals which can be tapped at the outputs in parallel receive differing sign values. Next to the input stage is provided a multiple part electrode, whose partial electrodes are individually associated with the outputs and coupled to the same via independent CTD transmission channels. The input stage comprises a region, oppositely doped to the semiconductor substrate, a gate under biasing voltage, several transfer gate electrode, an input gate for the input signal and a second gate. One or several CTD transmission channels combine each a transfer electrode of a stage with all other transfer electrodes of an adjacent stage, in order to form a common electrode. Preferably the partial electrodes are of such surface ratio as to correspond to the valuation coefficients of the outputs.</p>
申请公布号 DE2939544(A1) 申请公布日期 1981.04.16
申请号 DE19792939544 申请日期 1979.09.28
申请人 SIEMENS AG 发明人 KNAUER,KARL,DIPL.-ING.
分类号 H03H15/02;(IPC1-7):03H15/02 主分类号 H03H15/02
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