| 摘要 |
PURPOSE:To obtain a semiconductor laser having an excellent current-limitting function by adding a current cutoff layer and etch-back preventing layer to a semiconductor laser having a convex portion to shut in light and a clad layer to exude light, and specifying the forbidden-band width and conductivity type of each layer. CONSTITUTION:On an Si doped N type GaAs substrate 1 having a (100) surface, a P type Ga0.65Al0.35As layer 8 to be a current cutoff layer is grown by the liquid phase epitaxy, on which an N type Ga0.99Al0.01As etch-back preventing layer 9 is grown. Then, a groove 2G having a width of 2-10mum is made so as to extend from the surface of the layer 9 into the substrate 1. On the whole surface including the groove 2G; an N type Ga0.7Al0.3As clad layer 2, P type Ga0.95Al0.05As active layer 3, P type Ga0.7Al0.3As clad layer 4 and P type GaAs cap layer 5 are grown by the liquid phase epitaxy. After that, the upper and lower surfaces are coated with electrodes 6 and 7 respectively to obtain a semiconductor laser having a stable oscillation mode. |
