| 摘要 |
PURPOSE:To permit the composition of a heterojunction between silicon and silicon carbide to be continuously changed when preparing an amorphous semiconductor heterojunction element, by using a silicon substrate as a target for sputtering and supplying a hydrocarbon gas. CONSTITUTION:A substrate 1 of such metal as Al or Mo, or Pt, which forms a potential barrier, or n type polycrystalline Si or n type monocrystalline Si, is coated with an amorphous Si layer 2, on which p type amorphous SiC is grown to form an amorphous heterojunction element having different forbidden band widths. For this, an electrode 6 on which a substrate 5 to be coated is mounted and an electrode 8 on which a Si substrate 7 to be a target are placed in a vacuum chamber 4 facing each other. After the inside of the chamber 4 is once made at 1-5X10<-6> Torr, an inert gas such as Ar and H2 or a hydrocarbon gas such as CH4 are supplied through a value 9, and a DC voltage is applied to the electrodes 6 and 8 to produce a plasma state in the chamber 4 for evaporation. |
