| 摘要 |
PURPOSE:To grasp whether or not a thin film is normal right after it is adhered to a body to be processed without any extra processing by observing the generation amount of charged particles such as secondary ions. CONSTITUTION:When the thickness of the thin film A becomes 1/20-1/10 times final film thickness on the surface of the body 2 to be processed by chemical reaction to raw material gas 9, formation is interrupted and a specific position of the body 2 where the thin film A is formed is irradiated with an ion beam from an ion source 11. At this time, an ion detector 13c detects the charged particles 12 such as secondary ions generated at the irradiated position. Consequently, when the generation amount of the charged particles such as secondary ions increases in the depth direction of the body 2, it is found during the thin- film formation that the thin film A formed on the body 2 is a defective film having a latent defect, so the cleaning and degassing process in a processing chamber 1 is performed speedily. |
