| 摘要 |
1,235,641. Semi-conductor device. BROWN, BOVERI & CO. Ltd. 28 Jan., 1970 [30 Jan. 1969], No. 4108/70. Heading H1K. A semi-conductor diode comprises a discshaped silicon wafer 1 containing a PN junction (not shown) which terminates at the surface of the wafer at an annular conical chamfer 2 forming part of an annular sawtooth recess. The recess is filled with silicone rubber 4, and an end rim of a cylindrical insulating member 8, of polytetrafluoroethylene or ceramic material, embedded in the material 4. A gold-antimony foil 5 is alloyed to one face of the wafer, and an aluminium foil 6 contacts the other. A molybdenum carrier plate 7 contacts the electrode 6. The device is said to prevent flashover at the surface, in the region of the PN junction, up to a reverse voltage of 5000 volts for long periods. |
