| 摘要 |
Disclosed is a method of forming an insulating layer having an unusually low concentration of contaminating impurities such as sodium, copper, and iron on the surface of a semiconductor substrate during device fabrication. After the insulating layer has been grown or deposited on the surface of the substrate, a thin surface portion of the layer is removed by etching to a depth sufficient to remove a major portion of the impurities present in the layer. In one embodiment a glass film is formed on the surface of the layer by a reaction between an impurity modifier and the layer during processing of the device, to cause the impurities to concentrate in the glass film, and the glass film is removed, removing a major portion of the impurity contamination present in the layer. As a precaution against further contamination, a layer of barrier material is formed on the insulating layer. |
