| 摘要 |
The silicon body is first coated with a surface layer containing doping agents, e.g. boron or phosphorus glass, and then with an insulation layer e.g. pyrolytic SiO2 or Si3N4. Windows are then made in the insulation at those points where a lower conductivity is required and a single diffusion step carried out in an oxidizing or inert atmosphere. A third zone may be formed by removing both layers from one area, and depositing a further layer of insulation directly through that window on to the body and by removing the insulation layer only from a second areas as above. |
