| 摘要 |
PURPOSE:To attain oscillation in a stable fundamental mode, by making the stripe width of a striped active region not larger than two times of the diffusion length of a carrier and by making the difference of the refractive index of the striped active region from that of an active layer not less than 5X10<-3>. CONSTITUTION:An N type Al0.3Ga0.7As layer 11, an N type GaAs active layer 12 and an N type Al0.3Ga0.7As layer 13 are sequentially grown on an N type GaAs substrate 10. Zn is diffused with a low concentration through a stripe of about 4mum in width into an SiO2 film 14 provided on the third layer 13. The diffusion front 16 of the Zn is in contact with the boundary of the layers 12, 11 or stays in the layer 11. At that time, a Zn-diffused region 12' in the layer 12 is changed into the P type. The film 14 is then removed. Zn is diffused at 18 into the stripe of about 20mum in an SiO2 film 17 provided on the layer 13. The diffusion front of the latter Zn is located in the layer 13. |
