| 摘要 |
PURPOSE:To simplify the manufacturing process and to improve the integration density by directly connecting the metal wirings that are formed at the same time as the formation of the gate electrode to the source and drain diffusing layers electrically. CONSTITUTION:A field oxide film 12 and a gate oxide film 13 are grown on a P type substrate 11. Then, N type impurity ions are implanted into the substrate 11 with a photoresist film 14 having holes 15a and 15b as a mask. Then, the gate oxide film 13 in the holes 15a and 15b is etched out, and holes 17a and 17b are formed. Then, N type diffusion layers 16a and 16b are formed by heat treatment in a nitrogen atmosphere. After a gate electrode 18 and wiring layers 19a and 19b are formed, source and drain regions 20a and 20b are formed by implanting N type impurity ions and implementing activation, with said electrode 18 and said layers 19a and 19b as a mask. |
