| 发明名称 |
Method for fabrication of semiconductor devices |
| 摘要 |
A metallization or conductor or semiconductor layer formed over one major surface of a semiconductor wafer subjected to anodizing to form an anodized coating which has excellent adherence to the conductor or semiconductor layer and which is used as an etching mask when the conductor or semiconductor layer is etched.
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| 申请公布号 |
US4261792(A) |
申请公布日期 |
1981.04.14 |
| 申请号 |
US19780932194 |
申请日期 |
1978.08.09 |
| 申请人 |
MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
发明人 |
TSUJI, KAZUHIKO;OHZONE, TAKASHI;TAKAYANAGI, SHIGETOSHI |
| 分类号 |
H01L21/306;H01L21/3063;H01L21/312;H01L21/316;H01L21/3213;H01L21/768;(IPC1-7):H01L21/30 |
主分类号 |
H01L21/306 |
| 代理机构 |
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