| 摘要 |
PURPOSE:To conform a highly integrated circuit by shortening the distance between the wiring of two layer wiring structure and the window without making it short circuit by a method wherein the window for leading out electrode on a diffused layer is formed by selfalignment using a nitrided silicon film. CONSTITUTION:After an N type diffused layer 1 is formed on a surface of a P type silicon semiconductor substrate 2, the nitrided silicon film 11 having oxidation proof is selectively formed on the surface corresponding to the leading out electrode portion on the diffused layer 1. Next thereto, an oxidated silicon film 12 is formed on the semiconductor surface other than the nitrided film 11, a gate oxidation film and a window 13 are formed thereupon. Then, a polcrystalline layer 4 that an impurity has doped is selectively formed to form the first wiring layer, the surface thereof is heat oxidized to form the oxidized silicon layer 14. Thereafter, the nitrided silicon film 11 is removed to make the electrode leading out window 6 and the impurity doped polcrystalline silicon layer 7 is formed as the second wiring layer. |
