| 摘要 |
A monolithic semiconductor-on-insulator device includes silicon islands in spaced relation on the surface of an insulating substrate, with the spaces between the islands occupied by a passivating material which comprises a layer of a semi-insulating material having finite but low conductivity on the surface of the substrate and extending between adjacent islands into contiguous relation with the side surfaces thereof. The surface of the semi-insulating material has a layer of insulating silicon dioxide thereon. The conductivity of the semi-insulating material is such that charge does not accumulate in this material adjacent to the side edges of the islands, but its conductivity is low enough so that leakage currents between devices remain below an amount which would render the circuit which uses the device non-operative. |
