发明名称 |
Method for conducting heat to or from an article being treated under vacuum |
摘要 |
A method and apparatus are disclosed for providing heat conduction between an article being treated in a vacuum and a support member by providing a gas under pressure of about 0.5 to 2.0 Torr between the article and the support member. The method and apparatus are described for use in a semiconductor wafer ion implantation system wherein the wafer is clamped to the support member which is cooled. A seal can be provided between the wafer and the support member adjacent the periphery of the article.
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申请公布号 |
US4261762(A) |
申请公布日期 |
1981.04.14 |
申请号 |
US19790075401 |
申请日期 |
1979.09.14 |
申请人 |
EATON CORPORATION |
发明人 |
KING, MONROE L. |
分类号 |
H01J37/317;C23C14/54;C30B23/06;C30B31/22;H01J37/02;H01L21/265;(IPC1-7):H01J37/00;H01L23/44 |
主分类号 |
H01J37/317 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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